IGBT. IXGT40N60B2D1 Datasheet

IXGT40N60B2D1 Datasheet PDF


Part IXGT40N60B2D1
Description IGBT
Feature HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Prelimi.
Manufacture IXYS
Datasheet
Download IXGT40N60B2D1 Datasheet


HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and IXGT40N60B2D1 Datasheet




IXGT40N60B2D1
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
Preliminary Data Sheet
IXGH 40N60B2D1
IXGT 40N60B2D1
V
CES
IC25
VCE(sat)
t
fi typ
= 600 V
= 75 A
< 1.7 V
= 82 ns
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
V
GES
VGEM
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
V=
GE
15
V,
T
VJ
=
125°C,
R
G
=
10
Clamped inductive load @ 600 V
TC = 25°C
TJ
T
JM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md Mounting torque (M3)
Weight
TO-247 AD
TO-268 SMD
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
40 A
200 A
I = 80
CM
A
300
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
VGE(th)
I
CES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
V =V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 30 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.0 5.0 V
T
J
=
25°C
TJ = 150°C
TJ = 25°C
50 µA
1 mA
±100 nA
1.7 V
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
C
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z Medium frequency IGBT
z Square RBSOA
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
© 2003 IXYS All rights reserved
DS99109(10/03)



IXGT40N60B2D1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = 30 A; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
20 36
S
C
ies
Coes
C
res
Qg
Q
ge
Qgc
td(on)
tri
t
d(off)
tfi
E
off
t
d(on)
tri
E
on
td(off)
tfi
Eoff
R
thJC
RthCK
VCE = 25 V, VGE = 0 V, f = 1 MHz
I = 30 A, V = 15 V, V = 300 V
C GE CE
Inductive
load,
T
J
=
25°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = 3.3
Inductive load, TJ = 125°C
I = 30 A, V = 15 V
C GE
VCE = 400 V, RG = 3.3
(TO-247)
2560
210
54
pF
pF
pF
100 nC
15 nC
36 nC
18 ns
20 ns
130 200 ns
82 150 ns
0.4 0.8 mJ
18
20
0.3
240
150
1.10
ns
ns
mJ
ns
ns
mJ
0.42 K/W
0.25
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V
F
I = 30 A, V = 0 V, Pulse test
F GE
T
J
=150°C
1.6 V
t 300 µs, duty cycle d 2 %
2.5 V
IRM
trr
R
thJC
IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C
VR = 100 V
TJ = 100°C 100
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
25
4A
ns
ns
0.9 K/W
Min. Recommended Footprint
IXGH 40N60B2D1
IXGT 40N60B2D1
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 2.2 2.54
1
A 2.2 2.6
2
b 1.0 1.4
b 1.65 2.13
1
b 2.87 3.12
2
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343






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