Advanced Technical Information
IXKC 19N60C5
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface 2500 V electr...
Advanced Technical Information
IXKC 19N60C5
CoolMOS™ 1) Power
MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS
MOSFET Ultra low gate charge
D
G S
ID25
= 19 A
VDSS
= 600 V
RDS(on) max = 0.125 Ω
ISOPLUS220TM
G D S
E72873
q
isolated back
surface
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt
Conditions TVJ = 25°C
TC = 25°C TC = 90°C
single pulse repetitive
ID = 11 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings
600 V
± 20
V
19 A 15 A
708 mJ 1.2 mJ
50 V/ns
Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 16 A VDS = VGS; ID = 1.1 mA VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz
TVJ = 25°C TVJ = 125°C
VGS = 0 to 10 V; VDS = 400 V; ID = 12 A
VGS = 10 V; VDS = 400 V ID = 16 A; RG = 3.3 Ω
110
2.5
3
20
2500 120
53 12 18
15 5
50 5
125 mΩ
3.5
V
2 µA µA
100 nA
pF pF
70 nC nC nC
ns ns ns ns
0.95 K/W
Features
Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)
Fast CoolMOS™ 1) power
MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness
Enhanced total...
