IXSH35N140A

High Voltage High speed IGBT Short Circuit SOA Capability IXSH35N140A VCES = IC90 VCE(sat) = ≤ tfi(typ) = 1400V 35A 4.0V 200ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) (tSSCCSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TJ = 125°C, RG = 3Ω Clamped Inductive Load VRGEG = = 15V, 22Ω, VnCoEn=R8e4p0eVti,tiTveJ = 125°C TC = 25°C Mounting Torque Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Maximum Ratings 1400 1400 ±20 ±30 70 35 140 V V V V A A A ICM = 70 @VCE ≤ 960 10 A V μs 300 -55 ... +150 150 -55 ... +150 1.13 / 10 300 260 6 W °C °C °C Nm/lb.in. °C °C g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 4mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 35A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 4.5 7.5 V 50 μA 2 mA ±100 nA 3.4 4.0 V TO-247 G CE Tab G = Gate E = Emitter C = Collector Tab = Collector Features z International Standard Package JEDEC TO-247AD z High Frequency IGBT with Guaranteed Short Circuit SOA Capability z Fast Fall Time for Switching Speeds up to 20kHz z 2nd Generation HDMOSTM Process z Low VCE(SAT) - for Minimum on-state Conduction Losses z MOS Gate turn-on Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Converters z Switch-Mode and Reson...