IXST40N60B

High Speed IGBT Short Circuit SOA Capability IXSH 40N60B VCES = IXST 40N60B IC25 = VCE(sat) = tfi typ = 600V 75A 2.2V 100 ns Preliminary data Symbol Test Conditions VCES VCGR VGES V GEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ T JM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, VCC= 0.8 VCES VGE= 15 V, VCE = 360 V, TJ = 125°C R G = 22 W, non repetitive TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 600 ±20 ±30 75 40 150 ICM = 80 @ 0.8 VCES 10 V V V V A A A A ms 280 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 6g 300 °C Symbol BVCES VGE(th) ICES I GES VCE(sat) Test Conditions IC = 250 mA, VGE = 0 V IC = 4 mA, VCE = VGE VCE = 0.8 VCES VGE = 0 V V CE = 0 V, V GE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C 600 4 V 7V 25 mA 1 mA ±100 nA 2.2 V TO-247 AD (IXSH) G C E TO-268 (D3) ( IXST) (TAB) G E (TAB) G = Gate E = Emitter TAB = Collector Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 50 kHz Applications AC and DC mo...