PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA16N50P IXTP16N50P IXTQ16N50P
VDSS =
ID25 = ≤ RDS...
PolarHTTM Power
MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA16N50P IXTP16N50P IXTQ16N50P
VDSS =
ID25 = ≤ RDS(on)
500V 16A 400mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3P,TO-220) TO-263 TO-220 TO-3P
Maximum Ratings
500
V
500
V
±30
V
±40
V
16
A
35
A
16
A
750
mJ
10
V/ns
300
W
- 55 ... +150 150
- 55 ... +150
300 260
1.13/10
2.5 3.0 5.5
°C °C °C
°C °C
Nm/lb.in.
g g g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
500
V
3.0
5.5 V
±100 nA
5 μA 50 μA
400 mΩ
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G S
TO-220 (IXTP)
(TAB)
G DS TO-3P (IXTQ)
(TAB)
G DS
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
z International Standard Packages z Avalanche Rated z Fast Intrinsic Diode z Low Package Inductance
Advantages
z High Power Density z Easy to Mount z Space Savings
Applications
z Switched-Mode and Resonant-Mode Power Supplies
z DC-DC Converters z Laser Drivers z AC and DC ...