isc P-Channel MOSFET Transistor
IXTA24P085T
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤65mΩ ·100% avalanche...
isc P-Channel
MOSFET Transistor
IXTA24P085T
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤65mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
-85
VGS
Gate-Source
Voltage
±15
ID
Drain Current-Continuous
-24
IDM
Drain Current-Single Pulsed
-80
PD
Total Dissipation @TC=25℃
83
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Channel-to-case thermal resistance
MAX 1.5
UNIT ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc P-Channel
MOSFET Transistor
IXTA24P085T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= -250μA
-85
V
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID= -250μA
-2.5
-4.5
V
RDS(on) Drain-Source On-Resistance
VGS= -10V; ID= -12A
65
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±15V
±50
nA
VDS= VDSS; VGS= 0V
IDSS
Drain-Source Leakage Current
VDS= VDSS; VGS= 0V; TJ=125℃
-3 μA
-100
VSD
Diode forward
voltage
IF= -24A; VGS = 0V
-1.5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inf...
