isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.4mΩ@VGS=10V ·Fully characteri...
isc N-Channel
MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.4mΩ@VGS=10V ·Fully characterized avalanche
voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converters ·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
40
VGS
Gate-Source
Voltage
±15
ID
Drain Current-Continuous
270
IDM
Drain Current-Single Pulsed
800
PD
Total Dissipation @TC=25℃
375
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Junction-to-case thermal resistance
MAX 0.4
UNIT ℃/W
IXTA270N04T4
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isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID = 250μA
VGS(th) Gate Threshold
Voltage
VDS=VGS; ID = 250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 50A
IGSS
Gate-Source Leakage Current
VGS= ±15V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward
voltage
VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 150℃
IF= 100A; VGS = 0V
IXTA270N04T4
MIN MAX UNIT
40
V
2.0
4.0
V
2.4
mΩ
±200
nA
5 μA
750
1.4
V
NOTICE: ISC reserves the rights to make changes of the content herein the datashe...