Advanced Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 2N80 IXTP 2N...
Advanced Technical Information
High
Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 2N80 IXTP 2N80
VDSS ID25
RDS(on)
= 800 V = 2 A = 6.2 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
Maximum Ratings 800 800 ±20 ±30 2 8 2 V V V V A A A mJ mJ V/ns W °C °C °C Nm/lb.in. 4 300 g °C
TO-220AB (IXTP)
GD S
D (TAB)
TO-263 AA (IXTA)
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C
6 200 5 54 -55 ... +150 150 -55 ... +150
G S D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Mounting torque
1.13/10
Features
Maximum lead temperature for soldering
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 5.5 ±100 TJ = 125°C 25 500 6.2 V V nA µA µA Ω Applications
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
Switch-mode and resonant-mode
power supplies
Flyback inverters DC choppers
Advantages
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Space savings High power density
IXYS reserves ...