IXTA42N15T

TrenchHVTM Power MOSFET IXTA42N15T IXTP42N15T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150V 42A 45mΩ TO-263 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS RDS(on) VDS = VDSS VGS = 0V TJ = 150°C VGS = 10V, ID = 0.5 ID25, Notes 1, 2 Maximum Ratings 150 V 150 V ± 30 V 42 A 100 A 5 A 400 mJ 200 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 260 1.13 / 10 °C °C Nm/lb.in. 2.5 g 3.0 g Characteristic Values Min. Typ. Max. 150 V 2.5 4.5 V ±100 nA 5 μA 150 μA 38 45 mΩ G S TO-220 (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International standard packages z 175°C Operating Temperature z Avalanche rated Advantages z Easy to mount z Space savings z High power density Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor drives z Uninterruptible power supplies z High speed power switching applications © 2008 IXYS CORPORATION, All rights reserved DS99799A(11/08) Symbol Test Condi...