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IXTA4N80P Datasheet

Part Number IXTA4N80P
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTA4N80P DatasheetIXTA4N80P Datasheet (PDF)

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS(on) ≤ 3.4 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C Maximum Ra.

  IXTA4N80P   IXTA4N80P






Part Number IXTA4N80P
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IXTA4N80P DatasheetIXTA4N80P Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Dra.

  IXTA4N80P   IXTA4N80P







Power MOSFET

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS(on) ≤ 3.4 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C Maximum Ratings 800 V 800 V ± 30 ± 40 3.6 8 2 20 250 10 100 -55 ... +150 150 -55 ... +150 V V A A A mJ mJ V/ns W °C °C °C TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-220) TO-220 TO-263 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 3 g Features z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 100μA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 5 150 3.4 V V nA μA μA Ω z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS CORPORATION All rights reserved DS99596E(08/06) Free Datasheet http://www..


2013-09-28 : HMC358MS8GE    HMC358MS8G    SML-LXT0805AW-TR    SML-LXT0805GW-TR    SML-LXT0805IW-TR    SML-LXT0805SBW-TR    SML-LXT0805SRW-TR    SML-LXT0805SUGW-TR    SML-LXT0805SYW-TR    SML-LXT0805UPGW-TR   


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