PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA50N20P IXTP50N20P IXTQ50N20P
Symbol
VDSS VDGR
VG...
PolarHTTM Power
MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA50N20P IXTP50N20P IXTQ50N20P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-3P,TO-220) TO-263 TO-220 TO-3P
Maximum Ratings
200
V
200
V
±20
V
±30
V
50
A
120
A
50
A
1
J
10
V/ns
360
W
- 55 ... +175 175
- 55 ... +175
300 260
1.13/10
2.5 3.0 5.5
°C °C °C
°C °C
Nm/lb.in.
g g g
VDSS =
ID25 = ≤ RDS(on)
200V 50A 60mΩ
TO-263 (IXTA)
G S
TO-220 (IXTP)
(TAB)
G DS TO-3P (IXTQ)
(TAB)
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
200
V
2.5
5.0 V
±100 nA
25 μA 250 μA
60 mΩ
Features
International standard packages Unclamped Inductive Switching (UIS)
rated Low package inductance
- easy to drive and to protect
Advantages
Easy to mount Space savings High power density
© 2008 IXYS CORPORATION, All rights reserved
DS99156F(07/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise spe...