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IXTA56N15T

IXYS

Power MOSFETs

TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA56N15T IXTP56N15T VDSS ...


IXYS

IXTA56N15T

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TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA56N15T IXTP56N15T VDSS ID25 RDS(on) = 150V = 56A ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 56 140 5 500 3 300 -55 ... +175 175 -55 ... +175 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g Features z z z z z z z TO-220AB (IXTP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Dynamic dv/dt Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 150°C VGS = 10V, ID = 0.5 ID25, Notes 1, 2 Characteristic Values Min. Typ. Max. 150 3.0 5.0 V V z z Easy to Mount Space Savings High Power Density Applications z z z ±100 nA 5 μA 200 μA 36 mΩ z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Chopper...




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