DatasheetsPDF.com

IXTA80N10T Datasheet

Part Number IXTA80N10T
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IXTA80N10T DatasheetIXTA80N10T Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 80 IDM Drain Current-Single.

  IXTA80N10T   IXTA80N10T






Part Number IXTA80N10T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTA80N10T DatasheetIXTA80N10T Datasheet (PDF)

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA80N10T IXTP80N10T VDSS ID25 RDS(on) = = ≤ 100V 80A 14mΩ TO-263 AA (IXTA) G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 100 100 ± 20 ± 30 80 220 2.

  IXTA80N10T   IXTA80N10T







N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 220 PD Total Dissipation 230 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.65 62.5 UNIT ℃/W ℃/W IXTA80N10T isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=25A IGSS Gate-Source Leakage Current VGS=±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 75V; VGS= 0V VSDF Diode forward voltage ISD=25A, VGS = 0 V IXTA80N10T MIN TYP MAX UNIT 105 V 2.5 5.0 V 14 mΩ ±0.2 μA 5 μA 1.1 V NOTICE: ISC reserves the rights to make changes of the content herein the datash.


2020-11-06 : IXTA76N25T    IXTA70N085T    IXTA76N075T    IXTA80N10T    IXTA80N12T2    IXTA88N085T    IXTA90N15T    IXTA90N055T    IXTA90N055T2    IXTA90N075T2   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)