IXTH11N80

MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM I D25 IDM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C TC = 25°C, pulse width limited by TJM 11N80 13N80 11N80 13N80 800 V 800 V ±20 V ±30 V 11 A 13 A 44 A 52 A PD TJ TJM Tstg Md Weight TC = 25°C Mounting torque 300 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 °C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) G = Gate, S = Source, G D = Drain, TAB = Drain Features q International standard packages q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Low package inductance (< 5 nH) - easy to drive and to protect q Fast switching times Symbol V DSS VGS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V = 0 V, I = 3 mA GS D VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS V =0V GS TJ = 25°C T J = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, 800 2 11N80 13N80 V 4.5 V ±100 nA 250 µA 1 mA 0.95 Ω 0.80 Ω Applications q Switch-mode and resonant-mode power supplies q Motor controls q Uninterruptible Power Supplies (UPS) q DC choppers Advantages q Easy to mount with 1 screw (TO-247) ...