MOSFET. IXTH40N30 Datasheet

IXTH40N30 Datasheet PDF


IXTH40N30
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MegaMOSTMFET
IXTH 35N30
IXTH 40N30
IXTM 40N30
N-Channel Enhancement Mode
V
DSS
300 V
300 V
300 V
I
D25
35 A
40 A
40 A
R
DS(on)
0.10
0.085
0.088
Symbol
Test Conditions
Maximum Ratings
VDSS
V
DGR
VGS
VGSM
ID25
IDM
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
P
D
TJ
TJM
Tstg
Md
Weight
T
C
= 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 V
300 V
±20 V
±30 V
35N30
40N30
35N30
40N30
35 A
40 A
140 A
160 A
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
VDSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
V
DS
=
V,
GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
V = 10 V, I = 0.5 I
IXTH35N30
GS D D25
IXTH40N30
IXTM40N30
Pulse test, t 300 µs, duty cycle d 2 %
300
2
V
4V
±100 nA
200 µA
1 mA
0.10
0.085
0.088
TO-247 AD (IXTH)
TO-204 AE (IXTM)
D (TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
l International standard packages
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Low package inductance (< 5 nH)
- easy to drive and to protect
l Fast switching times
Applications
l Switch-mode and resonant-mode
power supplies
l Motor controls
l Uninterruptible Power Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91535E(5/96)
1-4


Part IXTH40N30
Description Power MOSFET
Feature IXTH40N30; www.DataSheet4U.com MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS .
Manufacture IXYS Corporation
Datasheet
Download IXTH40N30 Datasheet


isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Vol IXTH40N30 Datasheet
www.DataSheet4U.com MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM IXTH40N30 Datasheet





IXTH40N30
www.DataSheet4U.com
IXTH 35N30 IXTH 40N30
IXTM 40N30
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
22 25
4600
650
240
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
RG = 2 Ω, (External)
24 30
40 90
75 100
40 90
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
190 220
28 50
85 105
nC
nC
nC
0.42 K/W
0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
35N30
40N30
ISM Repetitive;
35N30
pulse width limited by TJM 40N30
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V
35 A
40 A
140 A
160 A
1.5 V
400 ns
TO-247 AD (IXTH) Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 2.2 2.54
1
A 2.2 2.6
2
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-204AE (IXTM) Outline
© 2000 IXYS All rights reserved
Pins
1 - Gate
2 - Source
Case - Drain
Dim. Millimeter
Min. Max.
A 6.4
A1 1.53
b 1.45
11.4
3.42
1.60
D 22.22
e 10.67 11.17
e1 5.21 5.71
L 11.18 12.19
p 3.84 4.19
p1 3.84 4.19
q 30.15 BSC
R 12.58 13.33
R1 3.33 4.77
s 16.64 17.14
Inches
Min. Max.
.250 .450
.060 .135
.057 .063
.875
.420 .440
.205 .225
.440 .480
.151 .165
.151 .165
1.187 BSC
.495 .525
.131 .188
.655 .675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4



IXTH40N30
www.DataSheet4U.com
Fig. 1 Output Characteristics
80
70
TJ = 25°C
60
50
40
30
20
10
0
024
VGS = 10V
68
8V
7V
6V
5V
10 12 14
VDS - Volts
Fig. 3 RDS(on) vs. Drain Current
2.0
TJ = 25°C
1.8
1.6
1.4
VGS = 10V
1.2
VGS = 15V
1.0
0.8
0.6
0
20 40 60 80 100
ID - Amperes
120
Fig. 5 Drain Current vs.
Case Temperature
50
40N30
40
35N30
30
20
10
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
© 2000 IXYS All rights reserved
IXTH 35N30 IXTH 40N30
IXTM 40N30
Fig. 2 Input Admittance
80
70
60
50
TJ = 25°C
40
30
20
10
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
1.25
ID = 20A
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
VGS(th)
1.1
BVDSS
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
3-4






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