IXTH62N65X2

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 50mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 62 A IDM Drain Current-Single Plused 124 A PD Total Dissipation @TC=25℃ 780 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.16 ℃/W IXTH62N65X2 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTH62N65X2 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 650 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 250uA 2.7 5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 26A 50 mΩ IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 VDS= 650V; VGS= 0;TJ=125℃ VSD Diode Forward On-voltage IF= 62A ;VGS= 0 ±100 nA 25 300 µA 1.4 V NOTICE： ISC reserves the rights to make changes of the...