PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P
V DS...
PolarHTTM Power
MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P
V DSS
ID25
RDS(on)
= 300 V = 88 A ≤ 40 mΩ
TO-247 (IXTH)
Symbol
VDSS V
DGR
VGS VGSM ID25 ID(RMS) IDM IAR E
AR
EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions
TJ = 25° C to 150° C
T J
=
25°
C
to
150°
C;
R GS
=
1
MΩ
Continuous
Transient
TC = 25° C External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
T C
= 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
T J
≤150° C,
R G
=
4
Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque
TO-247 TO-264 TO-3P & TO-268
Maximum Ratings
300
V
300
V
G D S
±20
V TO-264 (IXTK)
±30
V
88
A
75
A
220
A
60
A
60
mJ
G D S
2.0
J
TO-3P (IXTQ)
10
V/ns
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
6.0
g
10
g
5.5
g
G DS
TO-268 (IXTT)
G S
D (TAB)
D (TAB) (TAB) D (TAB)
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BV DSS
V GS
=
0
V,
I
D
=
250
µA
Characteristic Values Min. Typ. Max.
300
V
VGS(th)
VDS = VGS, ID = 250µA
2.5
5.0 V
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
V =0V GS
T J
=
125°
C
100 µA 1 mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
40 m Ω
G = Gate S = Source
D = Drain TAB = Drain
Features l International standard package l Unclamped Inductive Switching (UIS...