Power MOSFET
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V
ID25
11 A 13 A
RDS(on)
0...
Description
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V
ID25
11 A 13 A
RDS(on)
0.95 Ω 0.80 Ω
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR VGS VGSM I
D25
IDM
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
T C
= 25°C
TC = 25°C, pulse width limited by TJM
11N80 13N80 11N80 13N80
800 V
800 V
±20 V ±30 V
11 A 13 A 44 A 52 A
PD TJ TJM Tstg Md Weight
TC = 25°C Mounting torque
300 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
300 °C
TO-247 AD (IXTH) D (TAB)
TO-204 AA (IXTM)
G = Gate, S = Source,
G
D = Drain, TAB = Drain
Features
q International standard packages
q Low R
HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Low package inductance (< 5 nH)
- easy to drive and to protect
q Fast switching times
Symbol
V DSS
VGS(th) IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values
(T J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 0 V, I = 3 mA GS D
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS V =0V
GS
TJ = 25°C
T J
=
125°C
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs,
800 2
11N80 13N80
V 4.5 V
±100 nA
250 µA 1 mA
0.95 Ω 0.80 Ω
Applications
q Switch-mode and resonant-mode power supplies
q Motor controls q Uninterruptible Power Supplies (UPS) q DC choppers
Advantages
q Easy to mount with 1 screw (TO-247) ...
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