N-Channel MOSFET
MegaMOSTMFET
Obsolete: IXTM20N60
N-Channel Enhancement Mode
IXTH 20N60 IXTM 20N60
VDSS = 600 V
ID25 = 20 A RDS(on) = 0...
Description
MegaMOSTMFET
Obsolete: IXTM20N60
N-Channel Enhancement Mode
IXTH 20N60 IXTM 20N60
VDSS = 600 V
ID25 = 20 A RDS(on) = 0.35 Ω
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXTH)
VDSS V
DGR
VGS VGSM ID25
IDM
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
P D
TJ TJM Tstg Md Weight
T C
= 25°C
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
600
V
600
V
±20
V
±30
V
D (TAB)
15N60 20N60
15N60 20N60
15
A
20
A
TO-204 AE (IXTM)
60
A Package
80
A unavailable
300
W
-55 ... +150
°C
150
°C
. -55 ... +150
°C
1.13/10 Nm/lb.in.
G = Gate, S = Source,
G D
D = Drain, TAB = Drain
TO-204 = 18 g, TO-247 = 6 g
300
°C
Features
l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure
l Low package inductance (< 5 nH)
- easy to drive and to protect
l Fast switching times
Symbol
VDSS V
GS(th)
I GSS
IDSS
R DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 250 µA
600
V DS
=
V, GS
I
D
=
250
µA
2
V GS
=
±20
V, DC
V DS
=
0
VDS = 0.8 VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
V = 10 V, I = 0.5 I
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V 4.5 V
±100 nA
200 µA 1 mA
0.35 Ω
Applications
l Switch-mode and resonant-mode power supplies
l Motor control l Uninterruptible Power Supplies (UPS) l...
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