MegaMOSTMFET
N-Channel Enhancement Mode
IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10
VDSS
100 V 100 V
ID25
67 A 75 ...
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10
VDSS
100 V 100 V
ID25
67 A 75 A
RDS(on)
25 mΩ 20 mΩ
TO-247 AD (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR
E VGS
VGSM ID25
T IDM
PD
E TJ
TJM
L Tstg
Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C
Mounting torque
O Maximum lead temperature for soldering S 1.6 mm (0.062 in.) from case for 10 s
100
V
100
V
±20
V
±30
V
67N10 75N10
67N10 75N10
67
A
75
A
268
A
300
A
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
TO-204 TO-247 TO-268
1.13/10 Nm/lb.in.
18
g
6
g
5
g
10
°C
TO-204 AE (IXTM)
(TAB)
DG TO-268 (IXTT)
G
G = Gate, S = Source, Features
S
D = Drain, TAB = Drain
D (TAB)
z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect z Fast intrinsic Rectifier
B Symbol
Test Conditions
O VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
100
V
Applications
z DC-DC converters z Synchronous rectification z Battery chargers z Switched-mode and resonant-mode
power supplies
VGS(th)
VDS = VGS, ID = 4 mA
2.0
4V
z DC choppers
z AC motor control
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
z Temperature and lighting controls z Low
voltage relays
IDSS
...