Power MOSFETs with IXTB 30N100L
Extended FBSOA
IXTN 30N100L
N-Channel Enhancement Mode Avalanche Rated
VDSS = 1000 V...
Power
MOSFETs with IXTB 30N100L
Extended FBSOA
IXTN 30N100L
N-Channel Enhancement Mode Avalanche Rated
VDSS = 1000 V ID25 = 30 A
≤RDS(on) 0.45 Ω
Symbol
VDSS VDGR V
GS
VGSM ID25 IDM
IAR EAR EAS P
D
TJ TJM Tstg TL V
ISOL
Md
FC Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
Maximum Ratings
IXTB
IXTN
PLUS264 (IXTB)
1000
1000
V
1000
1000
V
± 30 ± 40
± 30 ± 40
V V
TC = 25°C TC = 25°C, Pulse width limited by T
JM
TC = 25°C
TC = 25°C
TC = 25°C
T = 25°C C
30 30 70 70
30 30 80 80 2.0 2.0 800 800
-55 ... +150 150
-55 ... +150
AG
A
D S
(TAB)
A miniBLOC, SOT-227 B (IXTN) mJ E153432
S
J DG
W
°C G
°C
S
°C
S
D
S
1.6 mm (0.063 in) from case for 10 s
300
50/60 Hz, RMS t = 1 min
IISOL < 1 mA
t=1s
Mounting torque Terminal connection torque
-
-
Mounting force
28..150 /6.4..30
PLUS264 SOT-227B
- °C
2500 3000
V~ V~
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in.
- N/lb.
10 g 30 g
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features Designed for linear operation International standard packages Molding epoxies meet UL 94 V-0
flammability classification SOT-227B miniBLOC with aluminium
nitride isolation
Symbol
VDSS VGS(th) I
GSS
IDSS
RDS(on)
Test Conditions (TJ = 25°C unless otherwise specified)
Characteristic Values Min. Typ. Max.
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 μA
V = ± 30 V , V = 0 GS DC DS
VDS = VDSS, VGS = 0 V
TJ = 25°C TJ ...
