isc N-Channel MOSFET Transistor
IXTP12N50PM
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static drain-source on...
isc N-Channel
MOSFET Transistor
IXTP12N50PM
·FEATURES ·Drain Source
Voltage-
: VDSS= 500V(Min) ·Static drain-source on-resistance
: RDS(on) ≤ 500mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
500
VGS
Gate-Source
Voltage
±30
ID
Drain Current-Continuous
6
IDM
Drain Current-Single Pulsed
30
PD
Total Dissipation @TC=25℃
50
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Junction-to-case thermal resistance
MAX 2.5
UNIT ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID =250μA
VGS(th) Gate Threshold
Voltage
VDS=VGS; ID =250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 6A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward
voltage
VDS= 500V; VGS= 0V VDS= 500V; VGS= 0V;TJ=125℃
IF= 12A; VGS = 0V
IXTP12N50PM
MIN MAX UNIT
500
V
3
5.5
V
500
mΩ
±100
nA
5 μA
250
1.5
V
NOTICE: ISC reserves the rights to make changes of the content herein the...