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IXTP12N65X2M Datasheet

Part Number IXTP12N65X2M
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTP12N65X2M DatasheetIXTP12N65X2M Datasheet (PDF)

X2-Class Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTP12N65X2M Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 50/60 Hz, 1 Minute Mounting To.

  IXTP12N65X2M   IXTP12N65X2M






Part Number IXTP12N65X2M
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IXTP12N65X2M DatasheetIXTP12N65X2M Datasheet (PDF)

isc N-Channel MOSFET Transistor IXTP12N65X2M ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·AC and DC Motor Drives ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continu.

  IXTP12N65X2M   IXTP12N65X2M







Power MOSFET

X2-Class Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTP12N65X2M Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 50/60 Hz, 1 Minute Mounting Torque Maximum Ratings 650 V 650 V 30 V 40 V 12 A 24 A 6 A 300 mJ 15 V/ns 40 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 2500 V~ 1.13 / 10 2.5 Nm/lb.in g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 6A, Note 1 Characteristic Values Min. Typ. Max. 650 V 2.5 4.5 V 100 nA 5 A 50 A 300 m VDSS = ID25 =  RDS(on) 650V 12A 300m OVERMOLDED TO-220 GDS Isolated Tab G = Gate S = Source D = Drain Features  International Standard Package  Plastic Overmolded Tab  Low RDS(ON) and QG  Avalanche Rated  2500V~ Electrical Isolation  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  R.


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