Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA160N10T IXTP1...
Preliminary Technical Information
TrenchMVTM Power
MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA160N10T IXTP160N10T
VDSS = ID25 =
RDS(on) ≤
100 160 7.0
V A mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220)
TO-220 TO-263
Maximum Ratings
100 100
± 30
160 75
430
25 500
V V
V
A A A
A mJ
3 V/ns
430
-55 ... +175 175
-55 ... +175
W
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
3g 2.5 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values Min. Typ. Max. 100 V
2.5 4.5 V
± 200 nA
5 μA 250 μA 6.1 7.0 mΩ
G S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages Easy to mount Space savings High power density
Applications Automotive - Motor Drives - 42V Power Bus
- ABS Systems DC/DC Converters ...