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IXTP200N055T2 MOSFET Datasheet PDF

Power MOSFET

Power MOSFET

 

 

 

Part Number IXTP200N055T2
Description Power MOSFET
Feature TrenchT2TM Power MOSFET IXTA200N055T2 I XTP200N055T2 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.
2mΩ N-Channel Enhancemen t Mode Avalanche Rated TO-263 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test C onditions TJ = 25°C to 175°C TJ = 25 C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25 C, Pulse Width Limited by TJM TC = 25 C TC = 25°C TC = 25°C 1.
6mm (0.
062in .
) from Case for 10s Plastic Body for 1 0 Seconds Mounting Torque (TO-220) TO-2 63 TO-220 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) B VDSS VGS = 0V, ID = 250μA .
Manufacture IXYS
Datasheet
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IXTP200N055T2

 

 

 


 

 

 

Part Number IXTP200N055T2
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor IXTP200 N055T2 ·FEATURES ·Static drain-sourc e on-resistance: RDS(on) ≤ 4.
2mΩ@VG S=10V ·Fully characterized avalanche v oltage and current ·100% avalanche tes ted ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Conve rters ·High Current Switching Applicat ions ·ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE VDSS Dr ain-Source Voltage 55 VGS Gate-Sourc e Voltage ±20 ID Drain Current-Cont inuous 200 IDM Drain Current-Single Pulsed 500 PD Total Dissipation @TC= 25℃ 360 Tj Operating Juncti .
Manufacture INCHANGE
Datasheet
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IXTP200N055T2

 

 

 

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