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IXTP230N075T2 Datasheet

Part Number IXTP230N075T2
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IXTP230N075T2 DatasheetIXTP230N075T2 Datasheet (PDF)

isc N-Channel MOSFET Transistor IXTP230N075T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous .

  IXTP230N075T2   IXTP230N075T2






Part Number IXTP230N075T2
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTP230N075T2 DatasheetIXTP230N075T2 Datasheet (PDF)

Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA230N075T2 IXTP230N075T2 VDSS = ID25 = RDS(on) ≤ 75V 230A 4.2mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting.

  IXTP230N075T2   IXTP230N075T2







N-Channel MOSFET

isc N-Channel MOSFET Transistor IXTP230N075T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 230 IDM Drain Current-Single Pulsed 700 PD Total Dissipation @TC=25℃ 480 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.31 UNIT ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTP230N075T2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA 75 V VGS(th) Gate Threshold Voltage VDS= VGS; ID = 250μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 50A 4.2 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V ±200 nA IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 150℃ IF= 100A; VGS = 0V 5 μA 150 1.3 V NOTICE: ISC reserves the rights to make changes of the content herein the d.


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