IXTP26P10T

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings - 100 V - 100 V 15 V 25 V - 26 A - 80 A - 26 A 300 mJ 150 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250A VGS(th) VDS = VGS, ID = - 250A IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = -10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.5 - 4.5 V 50 nA -10 A - 250 A 90 m VDSS = ID25 =  RDS(on) - 100V - 26A 90m TO-252 (IXTY) G S TO-263 (IXTA) D (Tab) G S TO-220 (IXTP) D (Tab) GDS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Avalanche Rated  Extended FBSOA  Fast Intrinsic Diode  Low RDS(ON) and QG Advantages  Easy to Mount  Space Savings  High Power Density Applications  High-Side Switching  Push Pull Amplifiers  DC Choppers  Automatic Test Equipment  C...