IXTP270N04T4

isc N-Channel MOSFET Transistor IXTP270N04T4 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.4mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous 270 IDM Drain Current-Single Pulsed 800 PD Total Dissipation @TC=25℃ 375 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.4 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTP270N04T4 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 40 V VGS(th) Gate Threshold Voltage VDS=VGS; ID = 250μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 50A 2.4 mΩ IGSS Gate-Source Leakage Current VGS= ±15V;VDS=0V ±200 nA IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 150℃ IF= 100A; VGS = 0V 5 μA 750 1.4 V NOTICE： ISC reserves the rights to make changes of the content herein the datash...