DatasheetsPDF.com

IXTP48N20T Datasheet

Part Number IXTP48N20T
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IXTP48N20T DatasheetIXTP48N20T Datasheet (PDF)

isc N-Channel MOSFET Transistor IXTP48N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 50mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous .

  IXTP48N20T   IXTP48N20T






Part Number IXTP48N20T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTP48N20T DatasheetIXTP48N20T Datasheet (PDF)

TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA48N20T IXTP48N20T IXTQ48N20T Symbol VDSS VDGR VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Force (TO-263) Mounting Torque (TO-2.

  IXTP48N20T   IXTP48N20T







N-Channel MOSFET

isc N-Channel MOSFET Transistor IXTP48N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 50mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 48 IDM Drain Current-Single Pulsed 130 PD Total Dissipation @TC=25℃ 250 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.6 UNIT ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA VGS(th) Gate Threshold Voltage VDS= VGS; ID = 250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID= 24A IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 150℃ IF= 48A; VGS = 0V IXTP48N20T MIN MAX UNIT 200 V 2.5 4.5 V 50 mΩ ±100 nA 5 μA 250 1.2 V NOTICE: ISC reserves the rights to make changes of the content herein the datash.


2020-11-19 : RURP3060    RHRG30120    PA905C4R    MUR8100D    MUR60120PT    MUR1560CT    MUR3040FCT    MUR4020    IXTP140N12T2    CLA60MT1200NHB   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)