Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTH180N10T IXTQ180N10T
N-Channel Enhancement Mode Avalanch...
Preliminary Technical Information
TrenchMVTM Power
MOSFET
IXTH180N10T IXTQ180N10T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 180 6.4
V A mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247
Maximum Ratings
100 100
± 30
180 75
450
25 750
V V
V
A A A
A mJ
3 V/ns
G DS
TO-3P (IXTQ)
G D S
(TAB) (TAB)
480 W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
5.5 g 6g
G = Gate S = Source
D = Drain TAB = Drain
Features Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Advantages Easy to mount Space savings High power density
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values Min. Typ. Max. 100 V
2.5 4.5 V
± 200 nA
5 µA 250 µA 5.4 6.4 m Ω
Applications Automotive - Motor Drives - 42V Power Bus
- ABS Systems
DC/DC Conv...