isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
: ...
isc N-Channel
MOSFET Transistor
·FEATURES ·Drain Source
Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.3mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching
Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
55
V
VGS
Gate-Source
Voltage-Continuous
±20
V
ID
Drain Current-Continuous
260
A
IDM
Drain Current-Single Plused
780
A
PD
Total Dissipation @TC=25℃
480
W
Tj
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.31
℃/W
IXTQ182N055T
isc website：www.iscsemi.com
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isc N-Channel
MOSFET Transistor
IXTQ182N055T
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID=1mA
55
V
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=250uA
2
4
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 50A
3.3 mΩ
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate
Voltage Drain Current
VSD
Diode Forward On-
voltage
VGS= ±20V;VDS= 0
VDS=55V; VGS= 0 VDS=55V; VGS= 0;TJ=150℃
IF= 100A ;VGS= 0
±200 nA
5 150
µA
1.3
V
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