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IXTQ52P10P
P-Channel MOSFET
Description
isc P-Channel
MOSFET
Transistor ·FEATURES ·Drain Source
Voltage
- : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤50mΩ@VGS= -10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density ·ABSOLUTE MAXIMUM RATINGS...
INCHANGE
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IXTQ52P10P
P-Channel MOSFET
- IXYS Corporation
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