isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
:...
isc N-Channel
MOSFET Transistor
·FEATURES ·Drain Source
Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 39mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
250
V
VGS
Gate-Source
Voltage-Continuous
±30
V
ID
Drain Current-Continuous
76
A
IDM
Drain Current-Single Plused
170
A
PD
Total Dissipation @TC=25℃
460
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.27
UNIT ℃/W
IXTQ76N25T
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
IXTQ76N25T
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID=1mA
250
V
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=1mA
3
5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 38A
39 mΩ
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate
Voltage Drain Current
VSD
Diode Forward On-
voltage
VGS= ±20V;VDS= 0
VDS=250V; VGS= 0 VDS=250V; VGS= 0;TJ=150℃
IF= 76A ;VGS= 0
±100 nA
5 200
µA
1.5
V
NOTI...