Preliminary Technical Information
TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH96N25T IXTQ96...
Preliminary Technical Information
TrenchHVTM Power
MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH96N25T IXTQ96N25T IXTV96N25T
VDSS = ID25 =
RDS(on) ≤
250V 96A 29mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR
VGSM
ID25 I
LRMS
IDM
IAS EAS
PD
TJ TJM Tstg
TL TSOLD
Md
F C
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220
Maximum Ratings
250
V
250
V
± 30
V
96
A
75
A
250
A
5
A
2
J
625
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
11..65 / 2.5..14.6
N/lb.
6.0
g
5.5
g
4.0
g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = ± 20V, VDS = 0V
I
DSS
V =V
DS
DSS
VGS = 0V
TJ = 125°C
R DS(on)
V GS
=
10V,
I
D
=
0.5
I,
D25
Notes
1,
2
Characteristic Values Min. Typ. Max.
250
V
3
5V
± 200 nA
5 μA 250 μA
29 mΩ
© 2007 IXYS CORPORATION, All rights reserved
G D S
TO-3P (IXTQ)
(TAB)
G D S
PLUS220 (IXTV)
(TAB)
G D S
G = Gate S = Source
D = Drain TAB = Drain
(TAB)
Features
z International standard packages z Avalanche rated z Low package inductance
- easy to drive and to protect
Advantages z Easy to mount z Space savings z High power densi...