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IXTU12N06T

IXYS

Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU12N06T IXTY12...


IXYS

IXTU12N06T

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU12N06T IXTY12N06T VDSS = ID25 = RDS(on) ≤ 60V 12A 85mΩ TO-251 (IXTU) Symbol VDSS VDGR VGSM ID25 IDM ILRMS IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM Package Current Limit, RMS TO-252 TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Mounting torque TO-251 TO-252 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 25μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 ID25, Notes 1, 2 Maximum Ratings 60 V 60 V ±20 V 12 A 30 A 25 A 3 A 20 mJ 33 -55 ... +175 175 -55 ... +175 300 260 1.13/10 0.40 0.35 W °C °C °C °C °C Nm/lb.in. g g Characteristic Values Min. Typ. Max. 60 V 2.0 4.0 V ± 50 nA 1 μA 100 μA 85 mΩ G D S D (TAB) TO-252 (IXTY) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - 42V Power Bus - ABS Systems z DC/DC Converters and Off-line UPS z Primary Switch for 24V ...




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