isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS ≥ 700V ·Static Drain-Source On-Resistance
: RDS...
isc N-Channel
MOSFET Transistor
·FEATURES ·Drain Source
Voltage-
: VDSS ≥ 700V ·Static Drain-Source On-Resistance
: RDS(on) ≤ 500mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·DC-DC Converters ·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
700
V
VGS
Gate-Source
Voltage-Continuous
±30
V
ID
Drain Current-Continuous
8
A
IDM
Drain Current-Single Plused
16
A
PD
Total Dissipation @TC=25℃
150
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.83
UNIT ℃/W
IXTU8N70X2
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
IXTU8N70X2
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown
Voltage VGS= 0; ID= 250uA
700
V
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID= 250uA
3
5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 4A
500 mΩ
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= 700V; VGS= 0 VDS= 700V; VGS= 0;TJ=125℃
VSD
Diode Forward On-
voltage
IF= 8A ;VGS= 0
±100 nA
10 250
µA
1.4
V
NOTICE： ISC reserves the rights to make changes o...
