MOSFET. IXTV86N25T Datasheet

IXTV86N25T Datasheet PDF


IXTV86N25T
Preliminary Technical Information
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH86N25T
IXTQ86N25T
IXTV86N25T
VDSS =
ID25 =
RDS(on)
250V
86A
37mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSM
ID25
I
LRMS
IDM
IAS
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
F
C
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247 & TO-3P)
Mounting force (PLUS220)
TO-247
TO-3P
PLUS220
Maximum Ratings
250
V
250
V
± 30
V
86
A
75
A
190
A
10
A
1.5
J
540
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
11..65 / 2.5..14.6
N/lb.
6.0
g
5.5
g
4.0
g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = ± 20V, VDS = 0V
I
DSS
V =V
DS
DSS
VGS = 0V
TJ = 125°C
R
DS(on)
V
GS
=
10V,
I
D
=
0.5
I,
D25
Notes
1,
2
Characteristic Values
Min. Typ. Max.
250
V
3
5V
± 200 nA
3 μA
250 μA
37 mΩ
© 2007 IXYS CORPORATION, All rights reserved
G
D
S
TO-3P (IXTQ)
(TAB
G
D
S
PLUS220 (IXTV)
(TAB)
G
D
S
G = Gate
S = Source
Features
(TAB)
D = Drain
TAB = Drain
z International standard packages
z Avalanche rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
z Uninterruptible power supplies
DS99784A(10/07)


Part IXTV86N25T
Description Power MOSFET
Feature IXTV86N25T; Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rat.
Manufacture IXYS
Datasheet
Download IXTV86N25T Datasheet


isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Vol IXTV86N25T Datasheet
Preliminary Technical Information Trench Gate Power MOSFET IXTV86N25T Datasheet





IXTV86N25T
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
g
fs
V
DS
=
10V,
I
D
=
0.5
I,
D25
Note
1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
Q
g(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 25A
RthJC
RthCS
Characteristic Values
Min. Typ. Max.
45
76
S
5330
pF
515
pF
92
pF
22
ns
28
ns
55
ns
25
ns
105
nC
32
nC
28
nC
0.23 °C/W
0.25
°C/W
Source-Drain Diode
Symbol
Test Conditions
T = 25°C unless otherwise specified)
J
I
V = 0V
S
GS
ISM
Repetitive, pulse width limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IRM
IF = 43A, -di/dt = 250A/μs
VR = 100V, VGS = 0V
QRM
Characteristic Values
Min. Typ. Max.
86 A
172 A
1.5 V
156
ns
21
A
1.7
μC
Notes: 1. Pulse test, t 300ms; duty cycle, d 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be
5mm or less from the package body.
PLUS220 (IXTV) Outline
IXTH86N25T IXTQ86N25T
IXTV86N25T
TO-247AD Outline
123
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
ÆP 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



IXTV86N25T
Fig. 1. Output Characteristics
@ 25ºC
90
VGS = 10V
80
8V
7V
70
60
50
6V
40
30
20
10
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
90
VGS = 10V
80
8V
7V
70
60
6V
50
40
30
20
5V
10
0
0
1
2
3
4
5
6
7
8
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 43A Value
vs. Drain Current
4.0
VGS = 10V
3.5
TJ = 125ºC
3.0
2.5
2.0
1.5
TJ = 25ºC
1.0
0.5
0
20 40 60 80 100 120 140 160 180 200
ID - Amperes
© 2007 IXYS CORPORATION, All rights reserved
IXTH86N25T IXTQ86N25T
IXTV86N25T
200
180
160
140
120
100
80
60
40
20
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
5V
2 4 6 8 10 12 14 16 18 20 22 24
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 43A Value
vs. Junction Temperature
3.4
VGS = 10V
3
2.6
2.2
I D = 86A
1.8
1.4
I D = 43A
1
0.6
0.2
-50
-25
0
25
50
75
100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
90
80 External Lead Current Limit
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100 125 150
TC - Degrees Centigrade






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