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IXTY1R6N50P
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.5Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE ...
INCHANGE
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