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IXTY26P10T
P-Channel MOSFET
Description
isc P-Channel
MOSFET
Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤90mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High side switching ·Push pull
amplifiers
·Current regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI...
INCHANGE
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