isc N-Channel MOSFET Transistor
IXTY2N80P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6Ω@VGS=10V ·Fully ch...
isc N-Channel
MOSFET Transistor
IXTY2N80P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche
voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
800
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-Continuous
2
A
IDM
Drain Current-Single Pulsed
4
A
PD
Total Dissipation @TC=25℃
70
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Junction-to-case thermal resistance
MAX 1.79
UNIT ℃/W
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isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID = 250μA
VGS(th) Gate Threshold
Voltage
VDS=VGS; ID = 50μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 1A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward
voltage
VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃
IF= 2A; VGS = 0V
IXTY2N80P
MIN MAX UNIT
800
V
3.0
5.5
V
6
Ω
±100
nA
5 μA
50
1.5
V
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