IXTY4N60P

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C 4 A TC = 25C, Pulse Width Limited by TJM 10 A TC = 25C OBSOLE4 TE A TC = 25C IS  IDM, VDD  VDSS, TJ  150°C IXTY4N1150060P mJ V/ns TC = 25C IXTA4N9060P W IXTP4N60P -55 ... +150 C 150 C -55 ... +150 C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.in TO-251 TO-252 TO-263 TO-220 0.40 g 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 100μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 600 V 3.0 5.5 V 100 nA 1 A 50 A 2 © 2017 IXYS CORPORATION, All Rights Reserved VDSS = ID25 =  RDS(on) 600V 4A 2 TO-251 (IXTU) G D S TO-252 (IXTY) D (Tab) G S TO-263 (IXTA) D (Tab) G S TO-220 (IXTP) D (Tab) GDS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Low QG  Avalanche Rated  Low Pack...