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J377 Datasheet

Part Number J377
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SJ377
Datasheet J377 DatasheetJ377 Datasheet (PDF)

www.DataSheet.co.kr 2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV) 2 2SJ377 5.2 ± 0.2 1.5 ± 0.2 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.16 Ω (typ.) 1.2 MAX. Unit: mm 6.5 ± 0.2 0.6 MAX. : IDSS = −100 μA (max) (VDS = −60 V) : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 9.5 ± 0.3 : |Yfs| = 4.0 S (typ.).

  J377   J377






Part Number J378
Manufacturers Toshiba
Logo Toshiba
Description 2SJ378
Datasheet J377 DatasheetJ378 Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

  J377   J377







Part Number J372
Manufacturers Shindengen Electric
Logo Shindengen Electric
Description 2SJ372
Datasheet J377 DatasheetJ372 Datasheet (PDF)

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  J377   J377







2SJ377

www.DataSheet.co.kr 2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV) 2 2SJ377 5.2 ± 0.2 1.5 ± 0.2 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.16 Ω (typ.) 1.2 MAX. Unit: mm 6.5 ± 0.2 0.6 MAX. : IDSS = −100 μA (max) (VDS = −60 V) : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 9.5 ± 0.3 : |Yfs| = 4.0 S (typ.) 5.5 ± 0.2 1.1 ± 0.2 0.6 MAX. 0.8 MAX. 2.3 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −60 −60 ±20 −5 −20 20 273 −5 2 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 0.6 ± 0.15 1 2 1.05 MAX. 3 2.3 ± 0.15 2.3 ± 0.15 0.1 ± 0.1 2 1 Pulse (Note 1) GATE DRAIN (HEAT SINK) 3. SOURSE 1. 2. 3 Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, .


2012-01-02 : J377    4501GSD    K25N120    P5NC50    R7731    S1D13U11    26LC2R    32LC2R    LTN140AT07-W01    LTN140AT07-B01   


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