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J652 Datasheet

Part Number J652
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SJ652
Datasheet J652 DatasheetJ652 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • • Package Dimensions unit : mm 2063A [2SJ652] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current.

  J652   J652






Part Number J659
Manufacturers Sanyo
Logo Sanyo
Description P-Channel Silicon MOSFET
Datasheet J652 DatasheetJ659 Datasheet (PDF)

Ordering number : EN8584 2SJ659 P-Channel Silicon MOSFET 2SJ659 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pul.

  J652   J652







Part Number J654
Manufacturers Sanyo
Logo Sanyo
Description P-Channl Silicon MOSFET
Datasheet J652 DatasheetJ654 Datasheet (PDF)

Ordering number : ENN7537 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2SJ654 P-Channl Silicon MOSFET 2SJ654 DC / DC Converter Applications Package Dimensions unit : mm 2063A 10.0 3.2 [2SJ654] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curr.

  J652   J652







2SJ652

www.DataSheet4U.com Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • • Package Dimensions unit : mm 2063A [2SJ652] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings --60 ±20 --28 --112 2.0 30 150 --55 to +150 Unit V V A A W W °C °C 2.55 2.55 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=± 16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-14A Ratings min --60 --1 ± 10 -1.2 18 26 --2.6 typ max Unit V µA µA V S Marking : J652 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose fail.


2014-02-19 : C5301    C4804    EM500X    QS3VH245PA    IDTQS3VH245    CS8816    2SC4211    2SC4641    2SC4639    7D5N60F1   


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