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J6920 Datasheet

Part Number J6920
Manufacturers FAIRCHILD
Logo FAIRCHILD
Description NPN Silicon Transistor
Datasheet J6920 DatasheetJ6920 Datasheet (PDF)

www.DataSheet4U.com FJL6920 FJL6920 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1700V • Low Saturation Voltage : VCE(sat) = 3V (Max.) • For Color Monitor 1 TO-264 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current.

  J6920   J6920






Part Number J6920
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet J6920 DatasheetJ6920 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·Low Saturation Voltage- : VCE(sat) = 3V (Max) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC .

  J6920   J6920







NPN Silicon Transistor

www.DataSheet4U.com FJL6920 FJL6920 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1700V • Low Saturation Voltage : VCE(sat) = 3V (Max.) • For Color Monitor 1 TO-264 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1700 800 6 20 30 200 150 -55 ~ 150 Units V V V A A W °C °C * Pulse Test: PW=300µs, duty Cycle=2% Pulsed Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVCBO BVCEO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=11A IC=11A, IB=2.75A IC=11A, IB=2.75A VCC=200V, IC=10A, RL=20Ω IB1=2.0A, IB2= - 4.0A 0.15 1700 800 6 8 5.5 8.5 3 1.5 3 0.2 V V µs µs Min. Typ. Max. 1 10 1 Units mA µA mA V V V * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Cha.


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