JANS2ST3360K

JANS2ST3360K Datasheet Rad-Hard 60 V, 0.8 A NPN and PNP complementary transistors 8 5 1 4 Flat-8 1 C1 2 B1 3 E1 C2 8 B2 7 E2 6 4 5 Flat-8 Pin 4 and pin 5 are connected together to the seal ring and lid Features Vceo IC(max.) 60 V 0.8 A Hermetic package Qualified as per MIL-PRF-M19500/773 100 krad HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The JANS2ST3360K is dual complementary (NPN and PNP) bipolar transistor in a single Flat-8 hermetic package. Qualified as per MIL-PRF-M19500/773 it is available in JANS and JANSR screening options. Able to operate under critical environment and radiation exposure, it provides high reliability performance and immunity to the total ionizing dose (TID) at high and low dose rate conditions. Specifically recommended for space and harsh environment applications it is suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration and high peak current required in power MOSFET driver circuits. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part-number J2ST3360K1 JANS2ST3360Kx JANSR2ST3360Kx Product summary Screening options Agency specification Engineering model - JANS JANSR MIL-PRF-M19500/773 Radiation Package level - Flat-8 - 100 krad Note: See Table 8 for ordering information. DS11305 - Rev 3 - February 2022 For further information contact your local STMicroelect...