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JANTX2N3847

Microsemi Corporation

(JANTX2N384x) NPN POWER SILICON TRANSISTOR

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices www.DataSheet4U.com Qualified Level...


Microsemi Corporation

JANTX2N3847

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Description
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices www.DataSheet4U.com Qualified Level 2N3847 JAN JANTX JANTXV 2N3846 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg Symbol RθJC 2N3846 200 300 2N3847 300 400 Units Vdc Vdc Vdc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +1000C (2) Operating & Storage Temperature Range 10 20 4.0 150 -65 to +200 Max. 0.5 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 26.6 mW/0C to +1750C 2) Derate linearly 2 W/0C to +1750C TO-63* 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; IB = 0 Collector-Emitter Cutoff Current VCE = 300 Vdc; VBE = 0 VCE = 400 Vdc; VBE = 0 Collector-Emitter Cutoff Current VCE = 200 Vdc; IB = 0 VCE = 300 Vdc; IB = 0 Emitter-Base Cutoff Current VBE = 10 Vdc; IC = 0 2N3846 2N3847 2N3846 2N3847 2N3846 2N3847 V(BR)CEO 200 300 2 2 5 5 250 Vdc ICES mAdc ICEO IEBO mAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3846, 2N3847 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1 Adc; VCE = 3.0 Vdc IC = 5 Adc; VCE = 3.0 Vdc...




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