TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/412 Devices
www.DataSheet4U.com
Qualified Level...
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/412 Devices
www.DataSheet4U.com
Qualified Level 2N3847 JAN JANTX JANTXV
2N3846
MAXIMUM RATINGS Ratings
Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PT Top, Tstg Symbol RθJC
2N3846 200 300
2N3847 300 400
Units
Vdc Vdc Vdc Adc W W 0 C Unit C/W
@ TA = +250C (1) @ TC = +1000C (2) Operating & Storage Temperature Range
10 20 4.0 150 -65 to +200 Max. 0.5
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 26.6 mW/0C to +1750C 2) Derate linearly 2 W/0C to +1750C
TO-63*
0
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage IC = 200 mAdc; IB = 0 Collector-Emitter Cutoff Current VCE = 300 Vdc; VBE = 0 VCE = 400 Vdc; VBE = 0 Collector-Emitter Cutoff Current VCE = 200 Vdc; IB = 0 VCE = 300 Vdc; IB = 0 Emitter-Base Cutoff Current VBE = 10 Vdc; IC = 0 2N3846 2N3847 2N3846 2N3847 2N3846 2N3847 V(BR)CEO 200 300 2 2 5 5 250 Vdc
ICES
mAdc
ICEO IEBO
mAdc µAdc
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120101 Page 1 of 2
2N3846, 2N3847 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC = 1 Adc; VCE = 3.0 Vdc IC = 5 Adc; VCE = 3.0 Vdc...