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Provisional Data Sheet No. PD-9.551B
JANTX2N6851 HEXFET POWER MOSFET JANTXV2...
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Provisional Data Sheet No. PD-9.551B
JANTX2N6851 HEXFET POWER
MOSFET JANTXV2N6851 [REF:MIL-PRF-19500/564] [GENERIC:IRFF9230]
®
P-CHANNEL -200 Volt, 0.80Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power
MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of
MOSFETs, such as
voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.
Product Summary
Part Number JANTX2N6851 JANTXV2N6851 BVDSS -200V RDS(on) 0.80Ω ID -4.0A
Features:
s s s s s
Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ V GS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
JANTX2N6851, JANTXV2N6851 Units
-4.0 -2.4 -16 25 0.20 ±20 -5.0 -55 to 150 300 (0.063 ...