JCS18N50FH

N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 25pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 25pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product Package ORDER MESSAGE Order codes JCS18N50FH-O-F-N-B Marking JCS18N50FH Package TO-220MF Halogen Free NO Packaging Device Weight Tube 2.20 g(typ) ：201007A 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter － Drain-Source Voltage Symbol VDSS Drain Current -continuous ID T=25℃ T=100℃ （ 1） Drain Current -pulse （note 1） IDM Gate-Source Voltage VGSS （ 2） Single Pulsed Avalanche Energy（note 2） EAS （ 1） Avalanche Current （note 1） IAR （ 1） Repetitive Avalanche Current （note 1） EAR （ 3） Peak Diode Recovery dv/dt （note 3） dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ，TSTG Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature JCS18N50FH Value 500 18.0* 11.0* 72* ±30 900 18.0 22.7 4.5 Unit V A A A V mJ A mJ V/ns 39.0 0.31 -55～+150 300 W W/℃ ℃ ℃ ：201007A 2/8 R ELECTRICAL CHARACTERISTIC JCS18N50FH Parameter Off –Characteristics － Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drai...