JMC090-20

JIEJIE MICROELECTRONICS CO.,Ltd JMC090-16/18/20 Description: 1) Chip: double mesa SCRs of reverse blocking high-voltage 2) Chip area: 10.8mm×10.8mm (central gate thyristor) 3) Technology: mesa glass passivation technology, multilayer metallization technology and non-void welding by vacuum welding technology Typical Application: Reactive power compensation, solid state relay, power module, etc. Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, TC=25℃) Parameter Test Conditions Symbol Values Unit Operating junction temperature range Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Tj=25℃ Tj=25℃ TC=80℃ Tj VDRM VRRM IT(AV) -40-125 1200/1600/1800 1200/1600/1800 90 ℃ V V A Peak on-state surge current I2t value for fusing Critical rate of rise of on-state current tp=10ms tp=10ms VD=2/3VDRM tp=200μs IG=0.3A Tj=125℃ dIG/dt=0.3A/μs ITSM I2t dI/dt 2000 20000 150 A A2s A/μs Electrical Characteristics (Packaged into modules, unless otherwise specified, TC=25℃) Parameter Peak on-state voltage Repetitive peak off-state current Repetitive peak reverse current Triggering gate current Latching current Holding current Triggering gate voltage Test Conditions IT=280A tp=380μs VD=VDRM TC=25℃ TC=125℃ VR=VRRM TC=25℃ TC=125℃ VD=12V RL=30Ω IG=1.2 IGT IT=1A VD=12V RL=30Ω Symbol VTM IDRM1 IDRM2 IRRM1 IRRM2 IGT IL IH VGT Values ≤1.8 ≤100 ≤20 ≤100 ≤20 20-120 ≤300 ≤250 ≤2 Unit V μA mA μA mA mA mA mA V TEL：+86-513-836...