JS28F512M29EW Datasheet PDF

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features • 2Gb = stacked device (two 1Gb die) • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–VCC (I/O buffers) • Asynchronous random/page read .

Numonyx™ Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block) 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program — 512-word program buffer Programming time — 0.

Numonyx™ Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block) 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program — 512-word program buffer Programming time — 0.